tm ?2006 fairchild semiconductor corporation 1 www.fairchildsemi.com FFP08H60S rev. a FFP08H60S 8 a, 600 v, hyperfast ii diode FFP08H60S features ? hyperfast recovery t rr = 45 ns (@ i f = 8 a) ? max forward voltage, v f = 2.6 v (@ t c = 25c) ? 600v reverse voltage and high reliability ? avalanche energy rated applications ? general purpose ? switching mode power supply ? free-wheeling diode for motor a pplication ? power switching circuits 8 a, 600 v, hyperfast ii diode the FFP08H60S is a hyperfast ii diode and silicon nitride passivated ion-implanted epitaxial planar construction. this device is intended for use as freewheeling/clamping diodes in a v ariety of switching power supplies and other power switc hing applications. its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. pin assignments absolute maximum ratings thermal characteristics package marking and ordering 1. cathode 2. anode 1 1. cathode 2. anode 2 to-220-2l symbol parameter value unit v rrm peak repetitive reverse voltage 600 v v rwm working peak reverse voltage 600 v v r dc blocking voltage 600 v i f(av) average rectified forward current @ t c = 105 c8a i fsm non-repetitive peak surge current 60hz single half-sine wave 60 a t j, t stg operating junction and storage temperature - 65 to +150 c symbol parameter max unit r jc maximum thermal resistance, junction to case 2.5 c/w device marking device package reel size tape width quantity 08h60s FFP08H60Stu to-220 - - 50 t c = 25c unless otherwise noted t c = 25c unless otherwise noted information ? rohs compliant february 2006
2 www.fairchildsemi.com FFP08H60S 8 a, 600 v, hyperfast ii diode electrical characteristics t c = 25c unless otherwise noted notes: 1. pulse : test pulse width = 300 s , duty cycle = 2% test circuit and waveforms parameter conditions min. typ. max unit v f 1 i f = 8 a i f = 8 a t c = 25 c t c = 125 c - - - - 2.1 1.7 v v i r 1 v r = 600 v v r = 600 v t c = 25 c t c = 125 c - - - - 100 200 a a t rr i f =1 a, di/dt = 100 a/s, v cc = 30 v i f =8 a, di/dt = 100 a/s, v cc = 390 v t c = 25 c t c = 25 c - - - - 35 45 ns ns t a t b q rr i f =8 a, di/dt = 100 a/s, v cc = 390 v t c = 25 c t c = 25 c t c = 25 c - - - 15 16 18.6 - - - ns ns nc w avl avalanche energy (l = 40 mh) 20 - - mj ?2006 fairchild semiconductor corporation FFP08H60S rev. a
3 www.fairchildsemi.com FFP08H60S 8 a, 600 v, hyperfast ii diode typical performance characteristics t c = 25c unless otherwise noted figure 1. typical forward voltage dr op figure 2. typical reverse current figure 3. typical junction capacitance f igure 4. typical reverse recovery time figure 5. typical reverse recovery current figure 6. forward current deration curve 012345 0.1 1 10 100 t c =150 o c t c =100 o c fprward current, i f [a] forward voltage, v f [v] t c =25 o c 0 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 100 t c =125 o c reverse current, ir [ a] reverse voltage, v r [v] t c =25 o c 1 10 100 0 20 40 60 80 junction capacitance, c j [pf] reverse voltage, v r [v] f=1mhz 100 200 300 400 500 600 10 20 30 40 50 60 70 80 90 100 t c =125 o c reverse recovery time, t rr [ns] di/dt [a/ s] t c =25 o c i f =8a 100 200 300 400 500 600 0 2 4 6 8 10 12 14 reverse recovery current, i rr [a] di/dt [a/ s] t c =125 o c t c =25 o c i f =8a 80 90 100 110 120 130 140 150 0 2 4 6 8 10 average rectified foreard current, i f(av) [a] case temperature, t c [ o c] dc ?2006 fairchild semiconductor corporation FFP08H60S rev. a
4 www.fairchildsemi.com FFP08H60S 8 a, 600 v, hyperfast ii diode dimensions in millimeters to-220ac package demensions ?2006 fairchild semiconductor corporation FFP08H60S rev. a
?2006 fairchild semiconductor corporation FFP08H60S rev. a 5 www.fairchildsemi.com
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